FDS6673BZ datasheet, mosfet equivalent, Fairchild Semiconductor

datasheet Download (Size : 436.00KB)

FDS6673BZ Features and benefits

* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
* Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
* Extended VGS range (-25V) for battery applications
* HBM ESD.

FDS6673BZ Application

common in Notebook Computers and Portable Battery Packs. Features
* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A

FDS6673BZ Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications com.

Image gallery